- barrier-emitter transistor
- біполярний транзистор з тунельним бар’єром в емітерній області
English-Ukrainian dictionary of microelectronics. 2013.
English-Ukrainian dictionary of microelectronics. 2013.
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
Transistor — Eine Auswahl an diskreten Transistoren in verschiedenen Gehäuseformen Ein Transistor ist ein elektronisches Bauelement zum Schalten und Verstärken von elektrischen Signalen, ohne dabei mechanische Bewegungen auszuführen. Transistoren sind die… … Deutsch Wikipedia
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
History of the transistor — Invention of the transistor= The first patent [patent|US|1745175|Julius Edgar Lilienfeld: Method and apparatus for controlling electric current first filed in Canada on 22.10.1925, describing a device similar to a MESFET] for the field effect… … Wikipedia
Alloy-junction transistor — The germanium alloy junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA in 1951 as an improvement over the earlier grown junction transistor. The usual construction of… … Wikipedia
Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… … Wikipedia
Heterostructure-emitter bipolar transistor — The Heterojunction emitter bipolar transistor (HEBT), is a somewhat unique arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier… … Wikipedia
Surface-barrier transistor — The surface barrier transistor is a type of transistor developed by Philco in 1953 as an improvement to the alloy junction transistor and the earlier point contact transistor. Like the modern schottky transistor, it offered much higher speed than … Wikipedia
Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… … Wikipedia
Liste elektrischer Bauelemente — Dieser Artikel listet elektrische beziehungsweise elektronische Bauelemente (auch Bauteile genannt) auf, die man für Schaltungen in der Elektrotechnik beziehungsweise Elektronik benötigt. Verschiedene elektronische Bauelemente Inhaltsverzeichnis … Deutsch Wikipedia
MISFET — Ein Transistor ist ein elektronisches Halbleiterbauelement zum Schalten und Verstärken von elektrischen Signalen ohne mechanische Bewegungen. Transistoren sind, teilweise als elementare Komponenten integrierter Schaltungen, Bestandteil der… … Deutsch Wikipedia